SI2301 – P-Channel MOSFET 2.8A SOT23

The A1SHB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching applications.

Quick Spec

• Maximum Power Dissipation (PD): 1.25W
• Maximum Drain-Source Voltage (VDS): 20V
• Maximum Gate-Source Voltage (Vgs): 8V
• Maximum Gate-Threshold Voltage (VGS – TH): 0.45V
• Maximum Drain Current (ID): 2.2A
• Maximum Junction Temperature (Tj): 150°C
• Rise Time (tr): 36 nS
• Drain-Source Capacitance (Cd): 223 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
• Surface Mount Package: SOT23

Pinout

Resources

• Datasheet