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Transistor MJE3055, 60V 10A NPN TO220
8 DH
- Type – NPN
- Collector-Emitter Voltage: 60 V
- Collector-Base Voltage: 70 V
- Emitter-Base Voltage: 5 V
- Collector Current: 10 A
- Collector Dissipation – 90 W
- DC Current Gain (hfe) – 20 to 100
- Transition Frequency – 2 MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package – TO-127
Type Designator: MJE3055
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: –
Package: TO126
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